ELECTRICA

A SIMPLE APPROACH FOR MODELING THE INFLUENCE OF HOT-CARRIERS ON THRESHOLD VOLTAGE OF MOS TRANSISTORS

1.

Istanbul University, Engineering Faculty Department of Electrical and Electronics Engineering 34800, Avcýlar, Ýstanbul, Turkey

2.

Istanbul Technical University, Faculty of Electrical and Electronics Engineering Department of Elektronics and Communication Engineering 80626, Maslak, Ýstanbul, Turkey

ELECTRICA 2001; 1: 201-208
Read: 177 Downloads: 141 Published: 10 November 2011

Hot-carrier-induced degradation of MOSFET parameters over time is an important reliabilityconcept in modern microcircuits. High energy carriers also called hot carriers are generated in theMOSFET by the large channel electric field near the drain region. The electric field accelarates thecarriers to effective temperatures well above the lattice temprature. These hot carriers transfer energyto the lattice through phonon emission and break bonds at the Si/SiO2 interface. The trapping or bondbreaking creates oxide charge and interface traps that effect the channel carrier mobility and theeffective channel potential.Interface traps and oxide charge effect transistor performance parameters such as threshold voltageand drive currents in all operating regimes. In this paper, the influence of the hot carriers on thethreshold voltage of MOS trasnsistors is examined experimentally. Using these experimental results anew method for representation of hot-carrier effect on the threshold voltage of MOS transistors isproposed.Key words: MOS transistor, Hot carriers, MOS models

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EISSN 2619-9831