ELECTRICA

A STUDY TO IMPROVE SYMMETRICAL CMOS OTA BEHAVIOUR IN SUBTHRESHOLD REGION

1.

Sakarya University, Department of Electrical and Electronics Engineering, Engineering Faculty, 54040, Esentepe, Adapazari, Turkey

2.

Istanbul Technical University, Faculty of Electrical and Electronics Engineering, Department of Electronics and Communication Engineering, 80626, Maslak, Istanbul, TURKEY

ELECTRICA 2002; 2: 527-535
Read: 141 Downloads: 83 Published: 09 January 2012

The current transfer characteristic of the CMOS symmetrical OTA, operating in the subthreshold region, depends much more on channel length modulation then operating in the strong inversion region. In this paper a new method is proposed to reduce the dependence on channel length modulation and to improve the OTA behaviour by changing one of the MOS transistor dimensions in the CMOS symmetrical OTA. The result is proven by SPICE simulations and by measurements.

Files
EISSN 2619-9831