In this paper, a photonic integrated device fabricated on a silicon-on-insulator(SOI) platform is studied numerically to investigate its hydrogen sensingpotential based on intensity variations. A single-slot hybrid structureconsisting of a coaxial micro-ring resonator (MRR) and a palladium (Pd) disk isutilized for this purpose. The results of the numerical study reveal a hydrogensensing ability of 2.83×10-4/(v/v-% hydrogen) and limit of detection (LOD) of9.93×10-3 which is more than 10 times of that of the hydrogen sensors based onthe traditional resonance shift. The proposed hydrogen sensing techniquepresents a compatible SOI-based technology and also provides a reliabledetection of the slightest changes from the zero concentration in an analyticalprocedure.