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Vol. 2 No. 2 (2002): ELECTRICA

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Published: Jan 9, 2012
Keywords:
CMOS OTA, Low power building blocks, Subthreshold region

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Gürsel DÜZENLI
Sakarya University, Department of Electrical and Electronics Engineering, Engineering Faculty, 54040, Esentepe, Adapazari, Turkey
Hakan KUNTMAN
Istanbul Technical University, Faculty of Electrical and Electronics Engineering, Department of Electronics and Communication Engineering, 80626, Maslak, Istanbul, TURKEY

A STUDY TO IMPROVE SYMMETRICAL CMOS OTA BEHAVIOUR IN SUBTHRESHOLD REGION

Main Article Content

Gürsel DÜZENLI
Sakarya University, Department of Electrical and Electronics Engineering, Engineering Faculty, 54040, Esentepe, Adapazari, Turkey
Hakan KUNTMAN
Istanbul Technical University, Faculty of Electrical and Electronics Engineering, Department of Electronics and Communication Engineering, 80626, Maslak, Istanbul, TURKEY

Abstract

The current transfer characteristic of the CMOS symmetrical OTA, operating in the subthreshold region, depends much more on channel length modulation then operating in the strong inversion region. In this paper a new method is proposed to reduce the dependence on channel length modulation and to improve the OTA behaviour by changing one of the MOS transistor dimensions in the CMOS symmetrical OTA. The result is proven by SPICE simulations and by measurements.


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