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We evaluated the impact of spatially nonuniform illumination on giant splash in the photoelectric gain of a photoconductor (PC) occurring with an increase in the concentration of recombination centers (traps) in semiconductors. Nonuniformity was considered along electric field in the PC. This study was performed beyond the quasi-neutrality (QN) approximation. It showed that the splash in the photoelectric gain at uniform and nonuniform illuminations can differ from each other by orders of magnitude due to the photoinduced space charge. In case of nonuniform illumination, the amplitude of the photoelectric gain splash strongly depends on the polarity of the applied bias voltage and the mutual directions of the gradient of incident radiation flux intensity and external electric field. A simple approach using QN approximation and uniform profile of photogenerated charge carriers does not allow to reveal the described features.
Cite this article as: Kholodnov VA, Nikitin MS. The Radical Impact of Spatially Nonuniform Illumination on Giant Splash in the Photoelectric Gain of a Photoconductor. Electrica, 2021; 21(1): 168-172.